Use:

Reliability tests such as fatigue resistance characteristics of simulated products and stability of tinned layer of pipe pins are carried out

Experimental conditions:

260°C 3times

Use:

The reliability of the test product under the impact of temperature and low temperature conditions has a relatively complete reliability analysis room

Experimental conditions:

-65°C-150°C

100/200/500/1000cycles

Use:

Measure the elemental composition or thickness of a product's coating

Use:

It is used to test and determine the parameters and performance of electronic and other products or materials after changes in temperature and environment. Test the heat-resistant, cold-resistant, dry-resistant and moisture-resistant properties of various materials.

Experimental conditions:

85°C,85%RH

168/500/1000hrs

Use:

It is used to test the sealing performance of the product, accelerate the life test of the product, quickly expose the defects and weak links of the product, and test the boredom and air tightness of the product.

Experimental conditions:

121°C，100%RH

96/168/336hrs

Use:

It is used to assess the adaptability of the product to work or store under long-term high temperature stress.

Experimental conditions:

150°C

168/500/1000hrs

Use:

Without destroying the electrical integrity of the material and maintaining structural integrity, defects such as delamination, cracks, and air holes inside the material can be detected

Use:

Used for tensile, ball peel and chip peel testing of product bond wires

Use:

Non-destructive internal fluoroscopic inspection of packaged components by X-ray

Use:

For quick detection of elements

Experimental conditions:

Elemental RoHS Defined Harmful Element Detection from Sulfur S-Uranium U: Pb/Hg/Cd/Cr/Br Halogen Free Directive Halogen Detection: Cl/Br 8 Large heavy metal detection: cadmium Cb, lead Pb, mercury Hg, chromium Cr, antimony Sb, arsenic As, barium Ba, selenium Se; Alloy: copper, stainless steel, nickel alloy, tin alloy

Use:

Used to evaluate the reliability of component LENDS in the solder bonding process

Experimental conditions:

Steam aging 8hrs

245° tin basin 5S

Use:

Discrete devices such as two- and three-tube, bridge stack, MOSFET and thyristor for various packages are subjected to high-temperature reverse high-temperature gate bias test (HTRB/HTGB), high-temperature leakage current test (HTIR) and aging screening

Experimental conditions:

150° Vgs=20V 

150°±2°C Vds=80V 

168/500/100hrs